The physical parameters of window layer (ZnO:i) and buffer layers (CdS and Zn(S.O))
| Parameter | ZnO:I55 | CdS55 | Zn(S,O)56 |
|---|---|---|---|
| Thickness: µm | 0.200 | 0.050 | 0.050 |
| Bandgap: eV | 3.350 | 2.400 | 2.700 |
| Electron affinity χ: eV | 4.350 | 4.000 | 4.300 |
| Dielectric permittivity | 9.000 | 10.000 | 10.000 |
| CB effective density of states: 1/cm3 | 2.200 × 1018 | 2.200E + 18 | 2.200E + 18 |
| VB effective density of states: 1/cm3 | 1.800 × 1019 | 1.800E + 19 | 1.800E + 19 |
| Electron mobility: cm²/Vs | 2.500 × 101 | 2.500 × 101 | 1.000 × 102 |
| Hole mobility: cm²/Vs | 1.000 × 102 | 1.000 × 102 | 2.500 × 101 |
| Shallow uniform donor density ND: cm−3 | 1.000 × 1018 | 1.000 × 1018 | 1.000 × 1017 |
| Shallow uniform acceptor density NA: cm−3 | 0.000 × 100 | 0.000 × 100 | 0.000 × 100 |
| Parameter | ZnO:I | CdS | Zn(S,O) |
|---|---|---|---|
| Thickness: µm | 0.200 | 0.050 | 0.050 |
| Bandgap: eV | 3.350 | 2.400 | 2.700 |
| Electron affinity χ: eV | 4.350 | 4.000 | 4.300 |
| Dielectric permittivity | 9.000 | 10.000 | 10.000 |
| 2.200 × 1018 | 2.200E + 18 | 2.200E + 18 | |
| 1.800 × 1019 | 1.800E + 19 | 1.800E + 19 | |
| Electron mobility: cm²/Vs | 2.500 × 101 | 2.500 × 101 | 1.000 × 102 |
| Hole mobility: cm²/Vs | 1.000 × 102 | 1.000 × 102 | 2.500 × 101 |
| Shallow uniform donor density | 1.000 × 1018 | 1.000 × 1018 | 1.000 × 1017 |
| Shallow uniform acceptor density | 0.000 × 100 | 0.000 × 100 | 0.000 × 100 |
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