Absorbents layer’s parameters used for simulation
| Parameter | CZTS-AD56 | CZTS-34056 | CZTS-36056 | CZTS-38056 |
|---|---|---|---|---|
| Thickness: µm | 3* | 3* | 3* | 3* |
| Bandgap: eV | 1.36* | 1.38* | 1.55* | 1.71* |
| Electron affinity χ: eV | 4.1 | 4.1 | 4.1 | 4.1 |
| Dielectric permittivity | 6.5 | 6.5 | 6.5 | 6.5 |
| CB effective density of states: 1/cm3 | 8.100 × 1016 | 8.100 × 1016 | 8.100 × 1016 | 8.100 × 1016 |
| VB effective density of states: 1/cm3 | 1.500 × 1019 | 1.500 × 1019 | 1.500 × 1019 | 1.500 × 1019 |
| Electron mobility: cm²/Vs | 1.851 × 101* | 2.466 × 101* | 1.467 × 101* | 9.786 × 100* |
| Hole mobility: cm²/Vs | 1.260 × 101 | 1.260 × 101 | 1.260 × 101 | 1.260 × 101 |
| Shallow uniform donor density ND: cm−3 | 4.831 × 1017* | 1.382 × 1016* | 1.019 × 1016* | 1.635 × 1015* |
| Shallow uniform acceptor density NA: cm−3 | 5.821 × 1017 | 1.665 × 1016 | 1.228 × 1016 | 1.917 × 1015 |
| Parameter | CZTS-AD | CZTS-340 | CZTS-360 | CZTS-380 |
|---|---|---|---|---|
| Thickness: µm | 3 | 3 | 3 | 3 |
| Bandgap: eV | 1.36 | 1.38 | 1.55 | 1.71 |
| Electron affinity χ: eV | 4.1 | 4.1 | 4.1 | 4.1 |
| Dielectric permittivity | 6.5 | 6.5 | 6.5 | 6.5 |
| 8.100 × 1016 | 8.100 × 1016 | 8.100 × 1016 | 8.100 × 1016 | |
| 1.500 × 1019 | 1.500 × 1019 | 1.500 × 1019 | 1.500 × 1019 | |
| Electron mobility: cm²/Vs | 1.851 × 101 | 2.466 × 101 | 1.467 × 101 | 9.786 × 100 |
| Hole mobility: cm²/Vs | 1.260 × 101 | 1.260 × 101 | 1.260 × 101 | 1.260 × 101 |
| Shallow uniform donor density | 4.831 × 1017 | 1.382 × 1016 | 1.019 × 1016 | 1.635 × 1015 |
| Shallow uniform acceptor density | 5.821 × 1017 | 1.665 × 1016 | 1.228 × 1016 | 1.917 × 1015 |
*experimental values.
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