Table 2 Summary of different TE...

Table 2

Summary of different TE materials under low-temperature conditions

Materials	Majority carriers	Temperature: K	ZT value	References
Bi₈₅Sb₁₄Pb₁	Holes	190–210	0.11–0.12	Chen et al.95,96
Bi_77.1Sb_22.9	Holes	240	0.13	Jin et al.97
Bismuth telluride	—	423	0.61	Kim et al.98
AgSbSe_0.25Te_1.75	Holes	520	0.65	Wojciechowski and Schmidt99
Bismuth telluride	Electrons	300–475	0.68–1.16	Guo et al.,100 Bao et al.,101 Akshay et al.,102,103 Yang et al.,104 Nour et al.,105 Saleemi et al.,106 Wu et al.107
CsBi₄Te₆	Holes	225	0.82	Chung et al.108
(Bi₂Te₃)_0.9(Bi_1.9Cu_0.1Se₃)_0.1	Electrons	417	0.98	Cui et al.109
Silicon	Holes	200	∼1.00	Boukai et al.110
Bi₂(Te,Se)₃	Electrons	300	1.01	Tan et al.111
MgAgSb_0.99In_0.01	Holes	525	∼1.10	Ying et al.112
Bi₂Te_2.7Se_0.3	Electrons	300–480	0.85–1.27	Yan et al.,113 Hong et al.,114 Tan et al.,115
(Bi₂Te₃)_0.24(Sb₂Te₃)_0.76	Holes	350	1.14	Jiang et al.116
Bi₂Te_2.5Se_0.5	Electrons	300–463	1.18–1.28	Xu et al.,117 Tan et al.118
Bi₂Te_2.3Se_0.69	Electrons	450	∼1.20	Zhai et al.119
Bi₂Te_2.79Se_0.21	Electrons	357	1.20	Hu et al.120
Bi₂Te_2.88Se_0.15	Electrons	298–423	1.18–1.22	Kim et al.121
Bi_0.3Sb_1.7Te₃	Holes	380	1.30	Hu et al.122
(Bi₂Te₃)_0.20(Sb₂Te₃)_0.80	Holes	398	1.33	Di et al.123
BiSbTe bulk alloy	Holes	300–373	1.20–1.40	Poudel et al.124
Bi_0.4Sb_1.6Te₃	Holes	300–398	1.20–1.41	Jimenez et al.,125 Chen et al.,126 Yeo and Oh127
(Bi,Sb)₂Te₃	Holes	273	1.41	Fan et al.128
(Bi,Sb)₂Te₃ bulk composites	Holes	440	1.47	Cao et al.129
Bi_0.48Sb_1.52Te₃	Holes	390	1.50	Xie et al.130
Bi_0.52Sb_1.48Te₃	Holes	300	∼1.56	Xie et al.131
Bi_0.50Sb_1.50Te₃	Holes	300–323	1.56–1.80	Jiang et al.,132 Lv et al.133
PbSnSeTe	—	300	2.00	Harman et al.134
Tellurium-embedded bismuth telluride	Electrons	375	2.27	Choi et al.135
Iodine-doped copper (I) selenide	—	400	2.30	Liu et al.136
Bismuth telluride/Sb₂Te₃ superlattice	Holes	300	∼2.40	Venkatasubramanian et al.137

Materials	Majority carriers	Temperature: K	ZT value	References
Bi₈₅Sb₁₄Pb₁	Holes	190–210	0.11–0.12	Chen et al.95,96
Bi_77.1Sb_22.9	Holes	240	0.13	Jin et al.97
Bismuth telluride	—	423	0.61	Kim et al.98
AgSbSe_0.25Te_1.75	Holes	520	0.65	Wojciechowski and Schmidt99
Bismuth telluride	Electrons	300–475	0.68–1.16	Guo et al.,100 Bao et al.,101 Akshay et al.,102,103 Yang et al.,104 Nour et al.,105 Saleemi et al.,106 Wu et al.107
CsBi₄Te₆	Holes	225	0.82	Chung et al.108
(Bi₂Te₃)_0.9(Bi_1.9Cu_0.1Se₃)_0.1	Electrons	417	0.98	Cui et al.109
Silicon	Holes	200	∼1.00	Boukai et al.110
Bi₂(Te,Se)₃	Electrons	300	1.01	Tan et al.111
MgAgSb_0.99In_0.01	Holes	525	∼1.10	Ying et al.112
Bi₂Te_2.7Se_0.3	Electrons	300–480	0.85–1.27	Yan et al.,113 Hong et al.,114 Tan et al.,115
(Bi₂Te₃)_0.24(Sb₂Te₃)_0.76	Holes	350	1.14	Jiang et al.116
Bi₂Te_2.5Se_0.5	Electrons	300–463	1.18–1.28	Xu et al.,117 Tan et al.118
Bi₂Te_2.3Se_0.69	Electrons	450	∼1.20	Zhai et al.119
Bi₂Te_2.79Se_0.21	Electrons	357	1.20	Hu et al.120
Bi₂Te_2.88Se_0.15	Electrons	298–423	1.18–1.22	Kim et al.121
Bi_0.3Sb_1.7Te₃	Holes	380	1.30	Hu et al.122
(Bi₂Te₃)_0.20(Sb₂Te₃)_0.80	Holes	398	1.33	Di et al.123
BiSbTe bulk alloy	Holes	300–373	1.20–1.40	Poudel et al.124
Bi_0.4Sb_1.6Te₃	Holes	300–398	1.20–1.41	Jimenez et al.,125 Chen et al.,126 Yeo and Oh127
(Bi,Sb)₂Te₃	Holes	273	1.41	Fan et al.128
(Bi,Sb)₂Te₃ bulk composites	Holes	440	1.47	Cao et al.129
Bi_0.48Sb_1.52Te₃	Holes	390	1.50	Xie et al.130
Bi_0.52Sb_1.48Te₃	Holes	300	∼1.56	Xie et al.131
Bi_0.50Sb_1.50Te₃	Holes	300–323	1.56–1.80	Jiang et al.,132 Lv et al.133
PbSnSeTe	—	300	2.00	Harman et al.134
Tellurium-embedded bismuth telluride	Electrons	375	2.27	Choi et al.135
Iodine-doped copper (I) selenide	—	400	2.30	Liu et al.136
Bismuth telluride/Sb₂Te₃ superlattice	Holes	300	∼2.40	Venkatasubramanian et al.137

Majority carriers: holes (p type) and electrons (n type)

[ViewLarge]