Table 3 Summary of different TE...

Table 3

Summary of different TE materials under high-temperature conditions

Materials	Majority carriers	Temperature: K	ZT value	References
Bi₂O_1.96Te_.04Se	Electrons	∼773	∼0.69	Pan et al.142
In_0.10Co₄Sb₁₂	—	573	∼0.79	Wang et al.143
Lead telluride–silicon	Electrons	675	0.90	Sootsman et al.144
Si₈₀Ge₂₀	H or E	1073	0.95–1.10	Joshi et al.,145 Usenko et al.146
Yb_0.19Co₄Sb₁₂	Electrons	600	∼1.00	Nolas et al.147
BiCuSeO	Holes	923	∼1.10	Li et al.148
In_0.25Co₄Sb₁₂	Electrons	573	∼1.20	He et al.149
Pb_9.6Sb_0.2Te₃Se₇	Electrons	∼650	1.20	Poudeu et al.150
Na_0.48Co₄Sb₁₂	—	850	1.25	Pei et al.151
Yb_0.20Co₄Sb_12.3	Electrons	800	1.26	Li et al.152
NaPb₁₈BiTe₂₀	Holes	670	∼1.30	Guéguen et al.153
SiGe	Electrons	1173	1.30	Wang et al.154
Lead telluride–lead (Pb)–sulfur (S)	Electrons	750	1.40	Girard et al.155
Lead telluride–lead–antimony	Electrons	650–700	1.40	Sootsman et al.156
ZrCoBi_0.65Sb_0.15Sn_0.20	Holes	973	∼1.42	Zhu et al.157
In₄Se_2.78	Electrons	705	1.48	Rhyee et al.158
FeNbSb	Holes	1200	∼1.50	Fu et al.159
Tin telluride	Holes	873	1.50	Li et al.160
Sb₂Te₂Se	Electrons	1000	1.50	Xu et al.161
Ag_0.8Pb_22.5SbTe₂₀	Electrons	700	1.50	Zhou et al.162
In₄Se_2.67Cl_0.03	Electrons	∼700	1.53	Rhyee et al.163
Sb₂Si₂Te₆/Si₂Te₃	Holes	823	1.08–1.65	Luo et al.,164 Huang and Zhao165
Lead selenide–tin (II) selenide	—	873	∼1.70	Tang et al.166
Lead telluride–strontium telluride (SrTe)	Holes	∼800	1.70	Biswas et al.167
Ba_0.08La_0.05Yb_0.04Co₄Sb₁₂	—	850	1.70	Shi et al.168
Sn_0.978Ag_0.007S_0.25Se_0.75	Holes	823	∼1.75	Cai et al.169
Ge_0.93Bi_0.07Te	Holes	773	∼2.00	Wu et al.170
Na-doped (PbTe)_0.86(PbSe)_0.07(PbS)_0.07	Holes	823	2.00	Korkosz et al.171
Pb_0.94Na_0.02Sr_0.04Te	H or E	800	∼2.10	Kim et al.172
Sn_0.97Ge_0.03Se	Holes	873	∼2.10	Chandra and Biswas173
Ge_0.93In_0.01Bi_0.06Te	Holes	723	∼2.10	Perumal et al.174
Potassium (K)-doped PbTe_0.7S_0.3	Holes	923	∼2.20	Wu et al.175
Magnesium telluride-doped PbTe_0.8Se_0.2	Holes	820	∼2.20	Fu et al.176
Pb_0.98Na_0.02Te–SrTe	Holes	923	2.50	Tan et al.177
Tin (II) selenide	Holes	850–923	1.00–2.60	Wei et al.,178 Zhao et al.179

Materials	Majority carriers	Temperature: K	ZT value	References
Bi₂O_1.96Te_.04Se	Electrons	∼773	∼0.69	Pan et al.142
In_0.10Co₄Sb₁₂	—	573	∼0.79	Wang et al.143
Lead telluride–silicon	Electrons	675	0.90	Sootsman et al.144
Si₈₀Ge₂₀	H or E	1073	0.95–1.10	Joshi et al.,145 Usenko et al.146
Yb_0.19Co₄Sb₁₂	Electrons	600	∼1.00	Nolas et al.147
BiCuSeO	Holes	923	∼1.10	Li et al.148
In_0.25Co₄Sb₁₂	Electrons	573	∼1.20	He et al.149
Pb_9.6Sb_0.2Te₃Se₇	Electrons	∼650	1.20	Poudeu et al.150
Na_0.48Co₄Sb₁₂	—	850	1.25	Pei et al.151
Yb_0.20Co₄Sb_12.3	Electrons	800	1.26	Li et al.152
NaPb₁₈BiTe₂₀	Holes	670	∼1.30	Guéguen et al.153
SiGe	Electrons	1173	1.30	Wang et al.154
Lead telluride–lead (Pb)–sulfur (S)	Electrons	750	1.40	Girard et al.155
Lead telluride–lead–antimony	Electrons	650–700	1.40	Sootsman et al.156
ZrCoBi_0.65Sb_0.15Sn_0.20	Holes	973	∼1.42	Zhu et al.157
In₄Se_2.78	Electrons	705	1.48	Rhyee et al.158
FeNbSb	Holes	1200	∼1.50	Fu et al.159
Tin telluride	Holes	873	1.50	Li et al.160
Sb₂Te₂Se	Electrons	1000	1.50	Xu et al.161
Ag_0.8Pb_22.5SbTe₂₀	Electrons	700	1.50	Zhou et al.162
In₄Se_2.67Cl_0.03	Electrons	∼700	1.53	Rhyee et al.163
Sb₂Si₂Te₆/Si₂Te₃	Holes	823	1.08–1.65	Luo et al.,164 Huang and Zhao165
Lead selenide–tin (II) selenide	—	873	∼1.70	Tang et al.166
Lead telluride–strontium telluride (SrTe)	Holes	∼800	1.70	Biswas et al.167
Ba_0.08La_0.05Yb_0.04Co₄Sb₁₂	—	850	1.70	Shi et al.168
Sn_0.978Ag_0.007S_0.25Se_0.75	Holes	823	∼1.75	Cai et al.169
Ge_0.93Bi_0.07Te	Holes	773	∼2.00	Wu et al.170
Na-doped (PbTe)_0.86(PbSe)_0.07(PbS)_0.07	Holes	823	2.00	Korkosz et al.171
Pb_0.94Na_0.02Sr_0.04Te	H or E	800	∼2.10	Kim et al.172
Sn_0.97Ge_0.03Se	Holes	873	∼2.10	Chandra and Biswas173
Ge_0.93In_0.01Bi_0.06Te	Holes	723	∼2.10	Perumal et al.174
Potassium (K)-doped PbTe_0.7S_0.3	Holes	923	∼2.20	Wu et al.175
Magnesium telluride-doped PbTe_0.8Se_0.2	Holes	820	∼2.20	Fu et al.176
Pb_0.98Na_0.02Te–SrTe	Holes	923	2.50	Tan et al.177
Tin (II) selenide	Holes	850–923	1.00–2.60	Wei et al.,178 Zhao et al.179

Majority carriers: holes (p type), electrons (n type) and H or E (p type or n type)

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