Figure 12.
The image presents a layered structure for a semiconductor material system, with labels indicating each layer's composition and thickness. The top part features a schematic of the layer arrangement, including a front contact, n Z n O with a thickness of 200 nanometres, n Z n S slash C d S at 50 nanometres, p C Z T S at 3 micrometres, a molybdenum back contact, and a soda lime glass substrate. The right side includes two energy band diagrams, labelled b and c, showing energy levels versus distance. The diagrams feature various energy levels, including E c, E f n, E f p, and E v, with indications of flat band regions at both the back and front contacts, separated by vertical dashed lines that indicate distances from 0 to 3.5 micrometres.Solar cell structure using CZTS film (a) and simulated band energies of the devices with CdS (b) and ZnS (c) buffer layers