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Volume 12, Issue 4
1 April 1993
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 12, Issue 4
Review Article| April 01 1993

A STUDY OF THE INFLUENCE OF HYDRODYNAMIC MODEL EFFECTS ON CHARACTERISTICS OF SILICON BIPOLAR TRANSISTORS

A.D. Sadovnikov;
A.D. Sadovnikov
Dept. of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
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D.J. Roulston
D.J. Roulston
Dept. of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1993
COMPEL (1993) 12 (4): 245–262.
https://doi.org/10.1108/eb051803

With decreasing vertical dimensions of the bipolar transistor (BJT), non‐local effects of nonuniform electron temperature should have a significant effect on the BJT characteristics. These effects can be simulated using a hydrodynamic (HD) model of the BJT, in which the equation of energy balance is added to the set of Poisson's and continuity equations.

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© MCB UP Limited
1993
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