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Volume 12, Issue 4
1 April 1993
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 12, Issue 4
Review Article| April 01 1993

NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON Available to Purchase

G.V. Gadiyak;
G.V. Gadiyak
Institute of Theoretical and Applied Mechanics Siberian Branch of Russian Academy of Sciences Novosibirsk 630090, Institutskaya, 4/1
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J.L. Korobitsina;
J.L. Korobitsina
Institute of Computational Technologies Siberian Branch of Russian Academy of Sciences Novosibirsk 630090, pr. Ak. Lavrentieva, 6
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V.I. Kramarenko
V.I. Kramarenko
Institute of Electrical Communications Novosibirsk 630125, Kirova, 86
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1993
COMPEL (1993) 12 (4): 417–422.
https://doi.org/10.1108/eb051815

The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.

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© MCB UP Limited
1993
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