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Volume 5, Issue 4
1 April 1986
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 5, Issue 4
Review Article| April 01 1986

NUMERICAL SIMULATION OF BIPOLAR INJECTION AND RECOMBINATION IN MNOS STRUCTURE

G.V. GADIYAK;
G.V. GADIYAK
Institute for Theoretical and Applied Mechanics, USSR Academy of Sciences, 630090 Novosibirsk 90, USSR
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M.S. OBRECHT;
M.S. OBRECHT
Institute for Theoretical and Applied Mechanics, USSR Academy of Sciences, 630090 Novosibirsk 90, USSR
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S.P. SINITSA
S.P. SINITSA
Institute for Theoretical and Applied Mechanics, USSR Academy of Sciences, 630090 Novosibirsk 90, USSR
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1986
COMPEL (1986) 5 (4): 227–234.
https://doi.org/10.1108/eb010029

In this paper we consider the effects of recombination during polarization on passing a current through SiN4 and SiO2. In the literature, some works have been devoted to the problem of the passage of a current through MNOS‐structures. However, these studies related mainly to monopolar injection or bipolar injection but ignored recombination.

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© MCB UP Limited
1986
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