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Volume 6, Issue 3
1 March 1987
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 6, Issue 3
Review Article| March 01 1987

NUMERICAL SOLUTION OF THE HYDRODYNAMIC MODEL FOR A ONE‐DIMENSIONAL SEMICONDUCTOR DEVICE

M. RUDAN;
M. RUDAN
IBM Corporation, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights 10598 N.Y., U.S.A. The permanent address of M. Rudan is: Dipartimento di Elettronica, Informatica e Sistemistica (DEIS), Facoltà di Ingegneria, Università di Bologna, viale Risorgimento 2, 40136 Bologna, Italy.
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F. ODEH;
F. ODEH
IBM Corporation, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights 10598 N.Y., U.S.A.
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J. WHITE
J. WHITE
IBM Corporation, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights 10598 N.Y., U.S.A.
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1987
COMPEL (1987) 6 (3): 151–170.
https://doi.org/10.1108/eb010032

A numerical implementation of a discretization scheme of the hydrodynamic model for submicron devices is described and applied to a one‐dimensional ballistic diode. The performance of the numerical method and the physical results of the simulation for different biases and lattice temperatures, and a brief comparison to Monte Carlo simulations, are also given.

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© MCB UP Limited
1987
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