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Volume 11, Issue 2
1 February 1992
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 11, Issue 2
Review Article| February 01 1992

TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

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E.D. LYUMKIS
Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia
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B.S. POLSKY
Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia
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A.I. SHUR
Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia
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P. VISOCKY
Research Institute of Mathematics and Computer Science, University of Latvia, 29 Rainis Boulevard, Riga, Latvia
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1992
COMPEL (1992) 11 (2): 311–325.
https://doi.org/10.1108/eb010094

An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.

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© MCB UP Limited
1992
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