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Volume 12, Issue 4
1 April 1993
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 12, Issue 4
Review Article| April 01 1993

THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaAS Available to Purchase

S.P. Wilson;
S.P. Wilson
Department of Physics, University of Durham South Road, DURHAM DH1 3LE, U.K.
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S. Brand;
S. Brand
Department of Physics, University of Durham South Road, DURHAM DH1 3LE, U.K.
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A.R. Beattie;
A.R. Beattie
Lower Leanassie, Kilmorack by Beauly, Inverness‐shire IV4 7AF, SCOTLAND
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R.A. Abram
R.A. Abram
Department of Physics, University of Durham South Road, DURHAM DH1 3LE, U.K.
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1993
COMPEL (1993) 12 (4): 457–473.
https://doi.org/10.1108/eb051819

A non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates in these materials as a function of direction in wavevector space. Results are presented for a range of transitions.

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© MCB UP Limited
1993
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