NUMERICAL COMPUTATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM DEVICE APPLICATIONS

We present a numerical self‐consistent method to solve for the electronic properties within a flexible and accurate theoretical model of selectively‐doped semiconductor heterostructures based on a two‐band k.P effective‐mass‐approximation Hamiltonian that includes non‐parabolicity, stress, piezo‐electric, finite temperature, many‐body, and DX center effects. The method can handle any planar configuration of heterostructures. Self‐consistency is achieved quickly via Broyden's method.