The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200–300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set‐up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.
Article navigation
1 March 2003
Conceptual Paper|
March 01 2003
Using of EM fields during industrial CZ and FZ large silicon crystal growth Available to Purchase
Alfred Mühlbauer;
Alfred Mühlbauer
Institute for Electrothermal Processes, University of Hanover, Hanover, Germany
Search for other works by this author on:
Andris Muiznieks;
Andris Muiznieks
Institute for Electrothermal Processes, University of Hanover, Hanover, Germany
Search for other works by this author on:
Gundars Ratnieks;
Gundars Ratnieks
Institute for Electrothermal Processes, University of Hanover, Hanover, Germany
Search for other works by this author on:
Armands Krauze;
Armands Krauze
Department of Physics, University of Latvia, Riga, Latvia
Search for other works by this author on:
Georg Raming;
Georg Raming
Wacker Siltronic AG, Burghausen, Germany
Search for other works by this author on:
Thomas Wetzel
Thomas Wetzel
Wacker Siltronic AG, Burghausen, Germany
Search for other works by this author on:
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
2003
COMPEL (2003) 22 (1): 123–133.
Citation
Mühlbauer A, Muiznieks A, Ratnieks G, Krauze A, Raming G, Wetzel T (2003), "Using of EM fields during industrial CZ and FZ large silicon crystal growth". COMPEL, Vol. 22 No. 1 pp. 123–133, doi: https://doi.org/10.1108/03321640310452222
Download citation file:
Sign in
Don't already have an account? Register
ICE Member Sign In
Log inPurchased this content as a guest? Enter your email address to restore access.
Please enter valid email address.
Email address must be 94 characters or fewer.
Pay-Per-View Access
$41.00
Rental
This article is also available for rental through DeepDyve.
173
Views
Suggested Reading
Mathematical modelling of the industrial growth of large silicon crystals by CZ and FZ process
COMPEL (March,2003)
A hybrid method for determining the reluctivity tensor components of Goss textured ferromagnetic materials
COMPEL (June,2004)
Analytical modeling of quantization effects in surrounding-gate MOSFETs
COMPEL (December,2013)
Computer-based modeling of moving cylindrical ferromagnetic billets induction heating
COMPEL (December,2013)
Space shuttle protein experiments use British laser technology
Sensor Review (December,2001)
Related Chapters
Ecological Balance of Silicon Using Rice Hull Ash in Agriculture
Sustainable Waste Management: Proceedings of the International Symposium held at the University of Dundee, Scotland, UK on 9–11 September 2003
Beyond Deductivism
Including a Symposium on Bruce Caldwell’s Beyond Positivism After 35 Years
Measurement and modelling of conduction in carbon fibre-cement composites
ICE Themes Smart Concrete
Recommended for you
These recommendations are informed by your reading behaviors and indicated interests.
