The purpose of this paper is to present a novel n‐buried‐PSOI sandwiched radio frequencies (RF) power lateral diffused metal‐oxide semiconductor (LDMOS) and analyze its output characteristics.
The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using the computer‐aided design tools.
This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage are higher than that of the conventional LDMOS.
This paper puts forward a novel n‐buried‐PSOI sandwiched structure of RF power LDMOS. The analysis indicates that the output characteristics of this device are a great improvement on the conventional LDMOS and the n‐buried‐PSOI, RF power LDMOS proposed by earlier authors.
