Through silicon vias: from a physical point of view to a compact models initiation

– The substrate coupling and loss in integrated circuits are analyzed. Then, the authors extract impedances between any numbers of embedded contacts. The paper aims to discuss these issues.

– The paper proposes a new substrate network 3D extraction technique, adapted from a transmission line method or Green kernels, but in the whole volume.

– Extracting impedances between any numbers of embedded contacts with variable shapes or/and through silicon via. This 3D method is much faster comparing with FEM

– Previous works consider TSVs alone, contacts onto the substrate. The authors do study entanglement between the substrate and the interconnections.