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Purpose
The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.
Design/methodology/approach
A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.
Findings
The results of the proposed model are very close to the tested ones.
Originality/value
A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.
© Emerald Publishing Limited
2017
Emerald Publishing Limited
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