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Volume 5, Issue 3
1 March 1986
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 5, Issue 3
Review Article| March 01 1986

FINITE ELEMENT SIMULATION OF HALL EFFECT IN SEMICONDUCTORS

Etsumasa KAMEDA;
Etsumasa KAMEDA
Department of Electrical Engineering, Toyama National College of Technology, Toyama 939, Japan
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Yukio KAGAWA
Yukio KAGAWA
Department of Electrical Engineering, National Univerity Toyama, Toyama 930, Japan
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1986
COMPEL (1986) 5 (3): 137–147.
https://doi.org/10.1108/eb010023

Materials with anisotropic conductivity are frequently used as sensors in electrical industries. In this paper, an anisotropic conductivity tensor to express Hall effect in n‐type semiconductors is derived and its steady‐current field is solved using the finite element method. Some numerical examples are given and comparison with measured data is discussed.

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© MCB UP Limited
1986
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