TWO‐DIMENSIONAL NUMERICAL MODELLING OF HEMT USING AN ENERGY TRANSPORT MODEL Available to Purchase

A two‐dimensional numerical computer simulation based on the analysis of the first three moments of the Boltzmann equation, known as the energy‐transport model, has been used to study various two‐dimensional effects on the performance of AlGaAs/GaAs heterostructure field‐effect transistor. The results are presented for half‐micron gate length. The calculation reveals significant electron current contribution coming from the AlGaAs region between the source and gate, contributing to the reduction of access resistance. As the electrons acquire large energies near the drain side edge of the gate, real‐space transfer to the AlGaAs region from the “two‐dimensional” electron gas channel occurs. However, at the drain end, the electron current is confined at the GaAs side of the heterointerface. The result shows insignificant current contribution from regions of depth greater than 0.048 µm into the undoped GaAs bulk. At room temperature, the results indicate transconductance, current gain cutoff frequency and power density about twice that which are calculated for “equivalent” GaAs MESFET, of identical structure and doping level as the heavily‐doped AlGaAs region. These results suggest that HEMT devices have the potential for providing significant sources of power at millimeter‐wave frequencies.