Open figure viewer
Using a simple test‐problem, we compare numerical results for the stationary semiconductor device continuity equation for electrons, obtained by the well known Box‐scheme, by Zlamal's Finite Element and by van Welij's Finite Element scheme as well as by two new discretization schemes. To interpret these results a classification of the considered schemes is proposed.
This content is only available via PDF.
© MCB UP Limited
1988
You do not currently have access to this content.
