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Keywords: Junction transistors
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Journal Articles
COMPEL (2007) 26 (5): 1236–1246.
Published: 13 November 2007
...Hamid Z. Fardi Purpose To model the differential dc gain, base resistance, and current voltage performance of 4H‐Silicon Carbide (SiC) bipolar junction transistors (BJT) operating at and above room temperature. Accurate modeling will result in improved process efficiency, interpretation...
