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Keywords: Models
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Journal Articles
The simplified model of the Class E inverter with the PWL model of the MOSFET turn off
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COMPEL (1997) 16 (2): 84–91.
Published: 01 June 1997
...Boguslaw Grzesik; Zbigniew Kaczmarczyk; Jacek Junak The paper presents the simplified model of the Class E inverter in which the MOSFET transistor is based on the piecewise‐linear (PWL) model. The model does not contain inductances. The PWL description makes it possible to obtain the model...
Journal Articles
Direct dual finite element solution method for the determination of capacitance, conductance or inductance in static linear problems
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COMPEL (1996) 15 (4): 63–81.
Published: 01 December 1996
... parameter description with another, well‐known variational method called “Tubes and Slices”. Shows that by aligning the finite element mesh with the approximate positions of the equipotentials and flux lines in the system, the dual finite element model can be simplified to the equivalent of Tubes and Slices...
Journal Articles
Finite element analysis of saturation effects in a squirrel cage electrical machine
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COMPEL (1996) 15 (4): 88–95.
Published: 01 December 1996
...Andrzej Demenko; Lech Nowak Presents a method for the finite element (FE) analysis of saturation effects in a squirrel‐ cage electrical machine. The proposed mathematical model includes the FE equations of the electromagnetic field, the equations which define the connection of windings...
Journal Articles
Direct finite element solution for the capacitance, conductance or inductance, and force in linear electrostatic and magnetostatic problems
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COMPEL (1996) 15 (3): 70–84.
Published: 01 September 1996
... for the direct method, and for quadratic elements, three times faster. © MCB UP Limited 1996 Electricity Mathematics Models Theory substituting Φ back into equation (3) gives It can be seen that equation (5) represents the capacitive energy in the system, and the capacitance matrix...
Journal Articles
Simulation of the hydrodynamic model of semiconductor devices by a finite element method
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COMPEL (1996) 15 (3): 4–21.
Published: 01 September 1996
...Michel Fortin; Geng Yang Proposes a finite element method for numerical simulation of the hydrodynamic model of semiconductor devices. Presents some scaling factors and a variational formulation. Uses the P1 ‐ isoP2 element to discretize this formulation...
Journal Articles
Simulation of electron states in quantum wires with mixed finite elements
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COMPEL (1996) 15 (3): 58–69.
Published: 01 September 1996
... in others. Semiconductor nanostructures have become so small that we have to take into account quantum effects. The two dimensional physical model consists of Poisson’s equation for the electrostatic potential φ, coupled with an eigenvalue problem for Schrödinger’s equation. Proposes...
Journal Articles
Noise parameters of HEMTs: analysis of their properties from a circuit model approach
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COMPEL (1996) 15 (3): 47–57.
Published: 01 September 1996
...A. Caddemi; M. Sannino Noise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key importance for the use of these devices for designing low‐noise amplifiers. Employs a simple noise model...
