The purpose of this paper is to investigate the temperature reliability for a parallel high-efficiency class-E power amplifier (PA).
To explore the relationship between temperature and direct current (DC) characteristics, output power, S parameters and efficiency of the PA quantitatively, a series of reliability experiments have been designed and conducted to study the temperature reliability for this PA.
From the results, the prominent performance degradation even failure is found during the testing. Furthermore, the thermal shock test can cause permanent failure, which is a great threat for PA.
Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the stage of PA design.
All these can provide important guidance for the reliability design of PA.
All these can give some important guidance for PA application.
In addition, PA is usually designed according to the electrical properties at the room temperature. From the results above, it can be concluded that it may be unable to satisfy the performance requirement at high temperature. In turn, if it is designed according to the electrical properties at low temperature, the transistor often works in the super-saturated state, the reliability of PA will become the new problem. Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the design.
