The purpose of this paper is to study, a bridged-T topology with inductorless passive network used as a bandpass (BP) negative group delay (NGD) function.
The BP NGD topology under study is composed of an inductorless passive resistive capacitive network. The circuit analysis is elaborated from the equivalent impedance matrix. Then, the analytical model of the C-shunt bridged-T topology voltage transfer function is established. The BP NGD analysis of the considered topology is developed in function of the bridged-T parameters. The NGD properties and characterizations of the proposed topology are analytically expressed. Moreover, the relevance of the BP NGD theory is verified with the design and fabrication of surface mounted device components-based proof-of-concept (PoC).
From measurement results, the BP NGD network with −151 ns at the center frequency of 1 MHz over −6.6 dB attenuation is in very good agreement with the C-shunt bridged-T PoC.
This paper develops a mathematical modeling theory and measurement of a C-shunt bridged-T network circuit.
