The purpose of this paper through the redundant monitoring unit reflecting the real-time temperature change of the array, an adaptive refresh circuit based on temperature is designed.
This paper proposed a circuit design for temperature-adaptive refresh with a fixed refresh frequency of traditional memory, high refresh power consumption at low temperature and low refresh frequency at high temperature.
Adding a metal oxide semiconductor (MOS) redundancy monitoring unit consistent with the storage unit to the storage bank can monitor the temperature change of the storage bank in real time, so that temperature-based memory adaptive refresh can be implemented.
According to the characteristics that the data holding time of dynamic random access memory storage unit decreases with the increase of temperature, a MOS redundant monitoring unit which is consistent with the storage unit is added to the storage array with the 2T storage unit as the core.
