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Keywords: Hold margin
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Journal Articles
Journal:
Circuit World
Circuit World (2019) 45 (4): 196–207.
Published: 10 September 2019
... the leakage power and active power. Findings The cell shows improvement in RSNM (read static noise margin) with LP8T by 2.39× at sub-threshold voltage 2.68× with D6T SRAM cell, 5.5× with TG8T. The WSNM (write static noise margin) and HM (hold margin) of the SRAM cell at 0.9 V is 306 mV and 384 mV...
