Keywords: Multi-threshold voltage
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Journal Articles

A read-disturb-free stable low power and high-density GNRFET 6T SRAM with multi-VT technology

Pramod Kumar Patel, M.M. Malik, Tarun Kumar Gutpa
Journal: Circuit World
Circuit World (2020) 46 (3): 203–214.
https://doi.org/10.1108/CW-06-2019-0054
Published: 23 March 2020
... and 2ØF is the surface inversion potential. Therefore, the total drain to source current flowing in the channel is (Fiori and Iannaccone, 2007): (6) I d s = I d s − s a t − I d i s p , Graphene nano-ribbon GNRFET 6T SRAM Multi-threshold voltage Low leakage...
View article titled, A read-disturb-free stable low power and high-density GNRFET 6T SRAM with multi-VT technology
Open the PDF for A read-disturb-free stable low power and high-density GNRFET 6T SRAM with multi-VT technology in another window
Add to Citation Manager for A read-disturb-free stable low power and high-density GNRFET 6T SRAM with multi-VT technology
This Feature Is Available To Subscribers Only

or Create an Account

Close subscription notice
Close access options