This study aims to examine the impacts of higher memory dependencies on a novel semiconductor material that exhibits generalized photo-piezo-thermo-elastic properties. Specifically, the research focuses on analyzing the behavior of the semiconductor under three distinct temperature models.
The study assumes a homogeneous and orthotropic piezo-semiconductor medium during photo-thermal excitation. The field equations have been devised to encompass higher order parameters, temporal delays and a specifically tailored kernel function to address the problem. The eigenmode technique is used to solve these equations and derive analytical expressions.
The research presents graphical representations of the physical field distribution across different temperatures, higher order plasma heat conduction models and time. The results reveal that the amplitude of the distribution profile is markedly affected by factors such as the memory effect, time, conductive temperature and spatial coordinates. These factors cannot be overlooked in the analysis and design of the semiconductor.
Specific cases are also discussed in detail, offering the potential to advance the creation of precise models and facilitate future simulations.
The research offers valuable information on the physical field distribution across various temperatures, allowing engineers and designers to optimize the design of semiconductor devices. Understanding the impact of memory effect, time, conductive temperature and spatial coordinates enables device performance and efficiency improvement.
This manuscript is the result of the joint efforts of the authors, who independently initiated and contributed equally to this study.
