The purpose of this paper is to analyze the redistribution of dopant and radiation defects to determine conditions which correspond to decreasing of elements in the considered inverter and at the same time to increase their density.
In this paper, the authors introduce an approach to increase integration rate of elements in a three-level inverter. The approach is based on decrease in the dimension of elements of the inverter (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.
The authors formulate recommendations to increase density of elements of the inverter with a decrease in their dimensions.
Optimization of manufacturing of integrated circuits and their elements.
The results of this paper are based on original analysis of transport of dopant with account transport and interaction of radiation defects.
