Impact of interface trap density at metal/SiN_x/n⁺ MOS capacitor in multilayered Si solar cells Available to Purchase

Impact of the SiN_x/n⁺-Si interface on silicon solar cell performance was investigated, where SiN_x is used as a passivation layer. Significant shifts in capacitance, conductance and leakage current characteristics were observed for metal/SiN:H/n⁺-Si MOS capacitor when it was subjected to a constant voltage stress of +10 V at room temperature. The interface trap density (D_it) across the SiN:H/n⁺-Si interface increased from 6·3 × 10⁹ to 7·5 × 10⁹ cm⁻²eV⁻¹ after a 500-s stress whereas the n⁺/p junction diode remained unaffected by the stress. A direct correlation between the degradation of SiN:H/Si interface and the solar cell performance was observed.