Study on particle size and field effect with sp²/sp³ ratio of hydrogenated diamond-like carbon

Hydrogenated diamond-like carbon (HDLC) films were synthesized through a reactive gas-plasma process employing methane (CH₄) and hydrogen (H₂) as precursor gases on a silicon (100) wafer substrate, conducted at room temperature. The deposition process utilized a biased enhanced nucleation technique, varying the flow rate ratio of hydrogen and methane. The investigations revealed that increasing the methane flow rate led to a reduction in grain size and an augmented nucleation density of HDLC, as evidenced by contact-mode atomic force microscopy (AFM) images. This study demonstrated the effective control of diamond grain growth by introducing high-methane-concentration pulses during deposition. The field emission characteristics of HDLC samples were analyzed, revealing threshold fields of 12.2 V/μm for nanocrystalline films, 8.5 V/μm for subcrystalline films and 4.1 V/μm for microcrystalline films, corroborated by Raman spectra. Surface energy measurements indicated hydrophobic behavior in the samples. Notably, a decrease in the hydrogen/methane ratio was found to increase the sp² character, which correlated with the emission field. AFM analysis of HDLC samples yielded surface roughness values ranging from 0.2 nm to approximately 0.01 nm, confirming the continuous, non-porous and smooth nature of the surfaces.