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Cadmium sulfide/silicon (CdS/Si) nanowire (NW) heterostructure arrays were prepared using the successive ionic layer adsorption and reaction technique based on etched Si NW templates using p-type (100) silicon wafer. Synthesized CdS/Si NW heterostructures were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), and their optical properties were measured using a ultraviolet–visible spectrophotometer. The results of reflectance spectra show the absorption edge at 460, 470 and 480 nm for 20, 30 and 40 cycles, respectively. XRD analysis indicates the formation of CdS with hexagonal (wurtzite) structure. Also, the presence of CdS was confirmed by both SEM and energy dispersive X-ray. The effect of cycle times on the photoluminescence intensity was also studied. The absorption and emission edges shift slightly towards long wavelength with increasing cycles of adsorption of CdS.

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