DS Schottky barrier cylindrical GAA MOSFET: nanosensor for biochips Available to Purchase

This paper presents an extensive mathematical study of a proposed nanogap-embedded dopant-segregated (DS) Schottky barrier (SB) cylindrical gate all-around (CGAA) metal-oxide-semiconductor field-effect transistor (MOSFET) of negatively/positively charged and neutral species observed by numerical simulation using an Atlas three-dimensional device simulator for electrical and label-free detection of bio/chemical (DNA, pH) and neutral species (protein) respectively as a nanosensor in the biomedical field at high sensitivity for direct electronic readout. This is the first time that the use of a nanogap-embedded DS-SB-CGAA MOSFET as a bio/chemical sensor has been reported. The threshold voltage (V _th) shift and change in current are considered as sensing metrics to detect biological or chemical species when they are immobilized in the carvel-built region. The shift in on current (I _on) of the nanogap-embedded DS-SB-CGAA MOSFET is also taken as a sensing metric, and better performance is observed compared to a conventional SB-CGAA MOSFET sensor. It is advantageous in terms of its low power/energy consumption as well as from the point of view of integration with the forthcoming silicon-based lab-on-chip systems due to the compatibility with the complementary metal-oxide semiconductor process.