...Eslam Abdeltwab; Nuha Al-Harbi; Ali Atta The optical functionality and surface performance of polyvinylpyrrolidone ( PVP ) were insufficient for advanced flexible optoelectronics applications, which necessitate the inclusion of zinc oxide (ZnO) to modify these characteristics in PVP/ZnO...

.... These modifications of the irradiated films result from a combination of the amorphization, defect formation, and polymer–nanoparticle interactions, making the irradiated PEO/Gd₂O₃ nanocomposite more suitable for optoelectronics devices. Princess Nourah bint Abdulrahman University...

... with novel properties for usage in different optical devices. The results show that the irradiated films PVA/NaI are appropriate for use as optical materials for flexible optoelectronic devices. Emerald Publishing Limited: All rights reserved 2025 1 K o = α λ 4 π...

... interactions between P(4ClAni) and iron (III) oxide were supported by the obtained results of this work. The obtained data indicate that the prepared P(4ClAni)/iron (III) oxide nanocomposites can be applied in several areas of optoelectronics. The P(4ClAni) polymer really shines in the field of optical...

... in optoelectronic devices. 22 01 2024 14 05 2024 The CA polymer is a very flexible substance with distinctive properties, rendering it well suited for diverse applications. 14 CA finds significant utilization within the textile industry. 15 The utilization of this polymer in the creation...

... dioxide composite to 3.84, 3.64 and 3.27 eV, respectively. Consequently, PVA/TiO₂ films are treated with ions to change their optical and structural properties, which are then used in a variety of optoelectronic applications. 30 10 2023 10 01 2024 Emerald Publishing Limited...

...Badriah M Alotaibi; Mervat R Atta; Eslam Abdeltwab; Ali Atta; Mostafa M Abdel-Hamid This work aimed to modify the surface properties of polydimethylsiloxane (PDMS) for use in optoelectronic devices by utilizing a handmade ion source. PDMS films were exposed to hydrogen fluences of 6...

... such as in optoelectronic devices. A absorbance c light speed E_d dispersion energy E_e absorption edge E_g bandgap E_o single-oscillator energy E_U Urbach energies...

... thin films in important applications – for example, optical data storage and optoelectronic devices. chalcogenide ion irradiation optoelectronic applications optoelectronics surface characterization thin films corresponding author: aamahmad@ju.edu.sa 09 04 2022 07 06 2022...