The purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.
Direct current plasma magnetron sputtering technique was employed for the WSi film growth. Different sputtering parameters were investigated, and the WSi films were characterized using four‐point probe electrical measurement method.
The experimental results reveal that the sputtering parameters such as deposition pressure and substrate temperature exert significant influence on the electrical properties of the WSi films.
By tuning the sputtering parameters, the electrical properties of the WSi films can be optimized and the film resistivity can be reduced significantly.
The investigation results presented in this paper are useful information for microelectronic industries in the area of microelectronic devices metallization.
The fabrication method described in this paper allows fabricating low‐resistivity WSi films by employing a lower deposition pressure and a lower substrate temperature.
