A frequency tunable half‐wave resonator at 3 GHz is presented with a microelectromechanical systems (MEMS) variable capacitor as the tuning element. The capacitor is fabricated using the multi‐user MEMS process (MUMPs) technology provided by JDS/Cronos, and transferred to an alumina substrate by an in‐house developed flip‐chip process. This capacitor is electrostatically actuated. The resulting C‐V response is linear with a slope of 0.05 pF/V for a wide range of actuation voltages. The MEMS device has a capacitance ratio of 3:1 for 0‐70 V bias, with a Q‐factor of 140 measured at 1 GHz. A half‐wave tunable microstrip resonator with bias lines is designed to include this MEMS device, which exhibits linear tuning over 180 MHz (6 percent) centered around 3 GHz with a constant 3 dB bandwidth of 160 MHz over the entire tuning range. The power consumption of the MEMS device was measured to be negligible.
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1 April 2003
Technical Paper|
April 01 2003
A frequency tunable half‐wave resonator using a MEMS variable capacitor Available to Purchase
Patrick Bell;
Patrick Bell
Department of Electrical Engineering, University of Colorado Boulder, CO, USA
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Nils Hoivik;
Nils Hoivik
Department of Electrical Engineering, University of Colorado Boulder, CO, USA
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Victor Bright;
Victor Bright
Department of Electrical Engineering, University of Colorado Boulder, CO, USA
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Zoya Popovic
Zoya Popovic
Department of Electrical Engineering, University of Colorado Boulder, CO, USA
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Publisher: Emerald Publishing
Online ISSN: 1758-812X
Print ISSN: 1356-5362
© MCB UP Limited
2003
Microelectronics International (2003) 20 (1): 21–25.
Citation
Bell P, Hoivik N, Bright V, Popovic Z (2003), "A frequency tunable half‐wave resonator using a MEMS variable capacitor". Microelectronics International, Vol. 20 No. 1 pp. 21–25, doi: https://doi.org/10.1108/13565360310455481
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