The purpose of this paper is to propose a simple electrothermal model of GaN Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory-made devices is proved.
The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis. This model takes into account influence of a change in ambient temperature in a wide range as well as influence of self-heating phenomena on dc characteristics of laboratory-made GaN Schottky diodes. The method of model parameters estimation is described.
It is shown that temperature influences fewer characteristics of GaN Schottky diodes than classical silicon diodes. The discussed model accurately describes properties of laboratory made GaN Schottky diodes. Additionally, the measured and computed characteristics of these diodes are shown and discussed.
The presented model together with the results of measurements and computations is dedicated only to laboratory-made GaN Schottky diodes.
The presented investigations show that characteristics of laboratory-made GaN Schottky diodes visibly change with temperature. These changes can be correctly estimated using the compact electrothermal model proposed in this paper. The correctness of this model is proved for four structures of such diodes characterised by different values of structure area and a different assembly process.
