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Keywords: AlN
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Journal Articles
Influence of AlN etching process on MISFET structures
Available to Purchase
Journal:
Microelectronics International
Microelectronics International (2019) 36 (3): 109–113.
Published: 18 June 2019
...Piotr Firek; Bartłomiej Stonio Purpose The purpose of this paper is to present the influence of gate dielectric etching on obtained MISFET (metal insulator semiconductor field effect transistor) structures. Because of its properties, aluminum nitride (AlN) layers can be successfully used...
