Update search
Filter
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
NARROW
Format
Journal
Type
Date
Availability
1-3 of 3
Keywords: Diodes
Close
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Journal Articles
Performance improvement of large area GaN MSM photodiode with thin AlGaN surface layer
Available to Purchase
Journal:
Microelectronics International
Microelectronics International (2010) 27 (3): 140–142.
Published: 03 August 2010
... Electron , Vol. 35 No. 10 , p. 1423 . Semiconductor devices Schottky‐barrier diodes Electric current Diodes Surface properties of materials © Emerald Group Publishing Limited 2010 L.S. Chuah can be contacted at: chuahleesiang@yahoo.com GaN active area is known...
Journal Articles
Comparison between models for p‐n junctions parameters extraction
Available to Purchase
Journal:
Microelectronics International
Microelectronics International (2009) 26 (2): 37–40.
Published: 08 May 2009
...G.C. Pesenti; H. Boudinov Purpose The purpose of this paper is to compare different junctions' parameters extraction models. Design/methodology/approach I‐V curves of p+‐n and pwell‐n diodes were measured. Five models...
Journal Articles
Silicon Schottky barrier photodiodes with a thin AlN nucleation layer
Available to Purchase
Journal:
Microelectronics International
Microelectronics International (2009) 26 (2): 41–44.
Published: 08 May 2009
... through the thin insulating layer. The electrical characteristics (I‐V) of the SB diodes were investigated by I‐V measurements at room temperature. The I‐V characteristics of ideal Schottky diodes under thermionic emission. For V > 3kT/q...
