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Keywords: Gate length
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Journal Articles
Optimization of 1-µm gate length InGaAs-InAlAs pHEMT
Available to PurchaseNaeemul Islam, Nur Syahadah Yusof, Mohamed Fauzi Packeer Mohamed, Syamsul M., Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Mohd Hendra Hairi
Journal:
Microelectronics International
Microelectronics International (2023) 40 (1): 63–67.
Published: 11 October 2022
... (fT) and maximum oscillation frequency (fmax) are determined by the role of its gate length (Lg). Theoretically, to obtain an Lg of 1 µm, the gate’s resist opening must be 1 µm wide. However, after the coat-expose-develop (C-E-D) process, the Lg became 13% larger after metal evaporation...
