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Keywords: HEMT
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Journal Articles
Optimization of 1-µm gate length InGaAs-InAlAs pHEMT
Available to PurchaseNaeemul Islam, Nur Syahadah Yusof, Mohamed Fauzi Packeer Mohamed, Syamsul M., Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Mohd Hendra Hairi
Journal:
Microelectronics International
Microelectronics International (2023) 40 (1): 63–67.
Published: 11 October 2022
... only HEMT Gate length High breakdown Metal evaporation Semiconductor device Sub-um These days, the pseudomorphic High Electron Mobility Transistor (pHEMT) has been used widely in the sector of microwave and millimeter-wave because this device has a unique character such as high...
