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Keywords: HEMT
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Journal Articles
Naeemul Islam, Nur Syahadah Yusof, Mohamed Fauzi Packeer Mohamed, Syamsul M., Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Mohd Hendra Hairi
Journal:
Microelectronics International
Microelectronics International (2023) 40 (1): 63–67.
Published: 11 October 2022
... The outcome of the optimization has reached that it is possible to get a nearly sub-µm range gate’s opening using a diluted resist, and at the same time retaining a high resolution and undercut profile. HEMT Gate length High breakdown Metal evaporation Semiconductor device Sub-um These days...
