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Keywords: MIFGMOS
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Journal Articles
Francisco Javier Plascencia Jauregui, Agustín Santiago Medina Vazquez, Edwin Christian Becerra Alvarez, José Manuel Arce Zavala, Sandra Fabiola Flores Ruiz
Journal:
Microelectronics International
Microelectronics International (2021) 38 (4): 206–215.
Published: 14 October 2021
..., the total potential produced by the CG on the substrate, where the channel of the MOS will be formed, is calculated with Electric field Floating gate MIFGMOS Poisson’s equation Volume charge density The multiple-input floating-gate metal-oxide semiconductor (MOS) (MIFGMOS) transistor...
