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Keywords: PECVD
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Journal Articles
Influence of the SiNx:H layer deposited by PECVD technique on the surface and grain boundary passivation of mc-Si
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Journal:
Microelectronics International
Microelectronics International (2016) 33 (3): 162–166.
Published: 01 August 2016
... (Panek et al., 2008). For the second batch, to fulfil the passivation and ARC requirements, hydrogenated silicon nitride (SiNx:H) was deposited by the PECVD method. SiNx:H layers ca. 100 nm thick were obtained with a mixture of ammonia (NH3), pure silane (SiH4) as precursor...
