... and 220 × 250 μm for the p_well‐body junction. The diodes were sintered in forming gas (10 percent of H₂) in the temperature interval of 450‐525°C for times from 30 min up to 4 h. Findings It was shown that the best annealing regimes are different for both kinds...

... Active layers of photoconductive cells based on doped CdS_0.32Se_0.68 were prepared by screen‐printing and sintering at 530°C. A sulfide‐selenide mixture or a mixed crystal material and propylene glycol (PG) was deposited as a paste. PG served as the temporary paste binder. Cadmium...

...S.L. Fu; L.S. Chen; J.N. Lu Substrate materials that can be sintered at temperatures lower than 1000°C have been prepared and studied. The main compositions were achieved by adding low softening point glasses to cordierite. A 96‐97% relative density can be obtained for cordierite to which 50‐60 wt...