– The purpose of this paper is to develop a spectral element modeling to predict electromechanical admittance in the surface-bonded piezoelectric wafer and beam structure considering temperature effects.
– For modeling the beam, the axial and transverse vibrations of the beam have been considered, and temperature-dependent mechanical and electromechanical properties of piezoelectric wafer active sensor and aluminum have been analyzed. The influences of temperature effects on electromechanical admittance are investigated.
– The results show that a frequency left shift and a decrease in amplitude of admittance in any natural frequencies with increasing temperature have been observed. The mechanism of these changes is discussed.
– The numerical results may be considered helpful for structural health monitoring using electromechanical impedance technique.
