This study aims to investigate the fabrication of hydrogen gas sensor based on metal–oxide–semiconductor (MOS) microstructure. The palladium nanoparticles (PdNPs) as gate metal have been deposited on the oxide film using spin coating.
The PdNPs and the surface of oxide film were analyzed using Transmission electron microscopy. The capacitance-voltage (C-V) curves for the MOS sensor in 1, 2 and 4 per cent hydrogen concentration and in 100 KHz frequency at the room temperature were reported.
The response times for 1, 2 and 4 per cent hydrogen concentration were 2.5 s, 1.5 s and 1 s, respectively. The responses (R per cent) of MOS sensor to 1, 2 and 4 per cent hydrogen concentration were 42.8, 47.3 and 52.6 per cent, respectively.
The experimental results demonstrate that the MOS hydrogen gas sensor based on the PdNPs gate, shows the fast response and recovery compared to other hydrogen gas sensors based on the Pd.
