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Keywords: Complementary metal-oxide semiconductor (MOS)
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Journal Articles
Sensor Review (2020) 40 (2): 141–151.
Published: 20 December 2019
... (a) Displacement profile and (b) stress profile of the pressure-sensing diaphragm under 100 psi of externally applied pressure Piezoresistive effect Pressure transducer Complementary metal-oxide semiconductor (MOS) Microelectromechanical system (MEMS) Today, microelectromechanical system-based...

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