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Volume 10, Issue 3
1 March 1991
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 10, Issue 3
Review Article| March 01 1991

3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES

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A.I. ADAMSONE
Computing Centre, Latvian State University, 29 Rainis Boulevard, Riga, U.S.S.R.
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B.S. POLSKY
Computing Centre, Latvian State University, 29 Rainis Boulevard, Riga, U.S.S.R.
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1991
COMPEL (1991) 10 (3): 129–139.
https://doi.org/10.1108/eb010086

A half‐implicit absolutely stable method for 3D simulation of the transient processes in semiconductor devices is proposed. The calculations of transient processes in bipolar transistor were carried out and were compared with the results of 2D simulation.

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© MCB UP Limited
1991
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