MONTE CARLO SIMULATION OF SiGe/Si MESFETs

The current‐voltage (Id—Vd) characteristics and microwave performance of Si1−xGex MESFETs are discussed. The 2D Poisson's equation along with the drift and diffusion equation are solved using a finite difference technique to calculate device parameters such as gm and fT. The low field carrier mobility is computed by using a single partice Monte Carlo program. In the simulation all relevant scattering mechanisms are accounted for.