CHARACTERIZATION OF SUBMICROMETER GaAs MESFET USING DRIFT‐DIFFUSION SIMULATOR

An empirical velocity‐field relationship, based on Monte Carlo simulation, is used to modify a drift‐diffusion model for the characterization of short gate GaAs MESFET's. The modified drift‐diffusion model is used to generate both the steady‐state and the small‐signal parameters of submicron GaAs MESFET's. The current, transconductance, and cutoff frequency are compared with two‐dimensional Monte Carlo simulation results on a 0.2 µm gate‐length. The model is also used to predict measured I‐V and s‐parameters of a 0.5 µm gate‐length ion‐implanted GaAs MESFET. The comparison and the analysis made, support the accuracy of the modified drift‐diffusion simulator and makes it computationally efficient for analysis of short‐gate devices.