COMBINED NUMERICAL/LARGE‐SIGNAL MODELLING APPLIED TO SOS MESFET DEVICES

A computer model of silicon‐on‐sapphire MESFETs has been developed in order to help the construction and technology work of novel complementary MES digital circuit building blocks. The modelling work is based partly on physical simulation by solving the semiconductor partial differential equations, and partly on development of a large‐signal MESFET model with an arbitrary doping profile input, implemented on a nonlinear circuit analysis program. The results showed cover investigations of both DC and transient behaviour of CMES inverters.